发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SUBSTRATE THEREFOR, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for easily manufacturing a substrate having a protruded and recessed surface which aids in improving the luminous efficiency of a semiconductor light emitting element without using a photolithographic method, and also to provide a method for manufacturing a high-performance semiconductor light emitting element. <P>SOLUTION: When inorganic particles 2 are arranged on a surface 1A of a substrate 1, and the substrate 1 is dry etched with use of the inorganic particles 2 as an etching mask, protruded portions 1B corresponding to the shapes of the inorganic particles are formed on the surface of the substrate. In this manner, the surface 1A is processed to form a protruded and recessed surface. The inorganic particles 2 may be particles of oxide, nitride, carbonide, boronide, sulphide, selenide, or metal, or may be particles of a mixture thereof. A semiconductor light emitting element having an excellent luminous efficiency is manufactured by laminating group 3-5 nitride semiconductor layers having different refractive indexes on the protruded and recessed surface of the substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019318(A) 申请公布日期 2007.01.25
申请号 JP20050200308 申请日期 2005.07.08
申请人 SUMITOMO CHEMICAL CO LTD 发明人 NISHIKAWA NAOHIRO;UEDA KAZUMASA;KASAHARA KENJI;TSUCHIDA YOSHIHIKO
分类号 H01L33/22;H01L21/3065;H01L33/32 主分类号 H01L33/22
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