| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky MOSFET which controls the fluctuation of current driving force. SOLUTION: A semiconductor device comprises one pair of source and drain regions consisting of metal or metal silicide, formed face to face on a semiconductor layer and on the semiconductor substrate; a first insulating film formed at least on the semiconductor layer between the source region and the drain region; a second insulating film formed on the first insulating film whose dielectric constant is higher than that of the first insulating film; and a gate electrode formed on the second insulating film. The length of the second insulating film measured in the opposite direction of the source region and the drain region is shorter than the length of the gate electrode measured in the opposite direction of the source region and the drain region. COPYRIGHT: (C)2007,JPO&INPIT
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