| 摘要 |
PROBLEM TO BE SOLVED: To provide a device, a method and a program for carrying out precise impurities diffusion simulation with ease under manufacturing conditions of a wide range. SOLUTION: Just after the ion implantation into the inside of a semiconductor substrate, the concentration distribution of the impurity atoms is calculated. Based on the maximum concentration of the impurity concentration distribution immediately after the calculated implantation, the number of interstitial atoms is set up which is generated in the semiconductor substrate by one impurity atom by which ion implantation is carried out. Subsequently, on the basis of the concentration of the impurity concentration distribution immediately after the calculated implantation and the number of interstitial atoms, the concentration distribution is calculated in the interstitial atom generated in the semiconductor substrate, the concentration distribution of the impurity atoms is calculated after the heat treatment on the basis of the concentration of the impurity concentration distribution immediately after the calculated implantation and the number of the interstitial atoms. The number of the interstitial atoms generated with the one above impurity atom is dependent only on the maximum concentration and determined by a value which is set up uniquely according to the kind of the impurity atom, when the above maximum concentration distribution is more than a predetermined threshold at which the above maximum concentration is set beforehand. COPYRIGHT: (C)2007,JPO&INPIT
|
