发明名称 EXPOSURE METHOD IN CHARGED PARTICLE BEAM EXPOSURE APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an exposure method in a charged particle beam exposure apparatus capable of lessening deflection distortion caused by a follower deflector and the amount of blur of the same even when a subfield is enlarged. SOLUTION: Charged particle beam is once interrupted with a blanker, and a main deflector power supply is set to an optimum value of first time exposure, and further the follower deflector 10 is set to an initial position. Blanking is released, and the follower deflector 10 is operated in accordance with the amount of stage movement, and further exposure is done in the range of 100a. In 101a, the blanking is applied, and a deflector serving as the main deflector is set to an optimum value of second time exposure and the follower deflector is set to an initial position. After the finish of the 101a region, the blanking is released, the follower deflector 10 is operated, and further exposure is done in the region of 100b. Likewise, in 101b, 101c, and 101d, the blanking and an electro-optic system are set, and further in 100c, 100d, and 100e, exposure is done as following the stage. In such a way, one subfield is exposed, divided to 5 times. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019167(A) 申请公布日期 2007.01.25
申请号 JP20050197684 申请日期 2005.07.06
申请人 NIKON CORP 发明人 SHIMIZU HIROYASU
分类号 H01L21/027;G03F7/20;G21K1/087;H01J37/305 主分类号 H01L21/027
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