发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To secure a metal silicide film between narrow gate electrodes in a silicide forming region, and to prevent silicification reaction in a non-silicide forming region. SOLUTION: Gate electrodes 103 are formed on a semiconductor device 101, and impurity diffusion layers 104 are formed in the semiconductor substrate 101 of exposed surface. Plasma oxide films 111 and CVD oxide films 112 are formed on the semiconductor substrate 101. Double side walls 112a are formed in the silicide forming region. Double side walls 111a are formed in the silicide forming region by wet etching. The CVD oxide films 112 are removed in the non-silicide forming region. High melting point metal films 113 are formed on the semiconductor substrate 101. Metal silicide films 114a and metal silicide films 114b are formed in the silicide forming region. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007019206(A) |
申请公布日期 |
2007.01.25 |
申请号 |
JP20050198327 |
申请日期 |
2005.07.07 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ISHINAGA ATSUSHI;KOTANI AKIHIKO;KANEGAE KENJI;SENGOKU NAOHISA;OKUNO YASUTOSHI |
分类号 |
H01L21/8234;H01L21/28;H01L27/088 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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