发明名称 GAS TREATMENT APPARATUS
摘要 <p>A film forming apparatus (100) is provided with a chamber (1) for storing a wafer; a placing table arranged in the chamber (1) to place the wafer; a shower head (4) arranged at a position facing the placing table for jetting a treatment gas into the chamber (1); and an exhaust mechanism for exhausting inside the chamber (1). The shower head (4) is provided with a center portion (46) whereupon a multitude of gas ejecting holes (45a, 45b) are formed for ejecting the treatment gas; and an outer circumference portion (47) which positions on the outer circumference side of the center portion (46) without having the gas ejecting ports (45a, 45b). The film forming apparatus (100) is further provided with a heat dissipating mechanism for dissipating heat of the shower head (4) from the entire circumference of the outer circumference portion (47) to the atmosphere side.</p>
申请公布号 WO2007010887(A1) 申请公布日期 2007.01.25
申请号 WO2006JP314147 申请日期 2006.07.18
申请人 TOKYO ELECTRON LIMITED;MATSUSHIMA, NORIAKI;TAKAHASHI, TSUYOSHI 发明人 MATSUSHIMA, NORIAKI;TAKAHASHI, TSUYOSHI
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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