发明名称 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive composition improved in exposure latitude and PEB temperature dependency and a pattern forming method using the photosensitive composition, as a photosensitive composition used in a process of producing a semiconductor such as IC, in production of a circuit board of a liquid crystal, a thermal head or the like and in another photofabrication process and a pattern forming method using the photosensitive composition. <P>SOLUTION: The positive resist composition comprises (A) a compound capable of generating an acid upon irradiation with an active ray or radiation, (B) a resin of which the solubility in an alkali developer increases by the action of an acid, (C) a compound represented by formula (C1) and (D) a solvent. The pattern forming method using the resist composition is also provided. In the formula (C1), R<SB>1</SB>represents a hydrocarbon group, R<SB>2</SB>and R<SB>3</SB>each independently represent H or a hydrocarbon group, and R<SB>1</SB>-R<SB>3</SB>may bond to each other to form a ring structure. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007017889(A) 申请公布日期 2007.01.25
申请号 JP20050202042 申请日期 2005.07.11
申请人 FUJIFILM CORP 发明人 IWATO KAORU
分类号 G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/004
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