| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of surely holding a current flowing via an equalizing circuit at a fixed limiting current when short-circuit defect of a bit line and a word line occurs. SOLUTION: The semiconductor storage device is equipped with the bit line pair BLT, the equalizing circuit 10 connected to a BLN, and a current limiting circuit 11 to supply the current to the equalizing circuit 10. The current limiting circuit 11 includes a first PMOS transistor TP1 with a bit line precharge voltage VHB applied to its source and a gate voltage generation circuit 15 generating the voltage V1 of the PMOS transistor TP1. The gate voltage generation circuit 15 generates the voltage V1 by performing feedback control in such a manner that the difference between the bit line precharge voltage VHB and the voltage V1 coincides with the threshold voltage of a second PMOS transistor TP2 while the prescribed current flows to the second PMOS transistor TP2 having the same process and operation characteristics as those of the PMOS transistor TP1. COPYRIGHT: (C)2007,JPO&INPIT
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