| 发明名称 |
Gate Electrode structures and methods of manufacture |
| 摘要 |
Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.
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| 申请公布号 |
US2007018244(A1) |
申请公布日期 |
2007.01.25 |
| 申请号 |
US20050185180 |
申请日期 |
2005.07.20 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HUNG STEVEN C. H.;MINER GARY E. |
| 分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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