发明名称 |
Layout structure of MOS transistors and methods of disposing MOS transistors on an active region |
摘要 |
In a layout structure of a plurality of metal oxide semiconductor (MOS) transistors, the layout structure may include a first group of MOS transistors having first drain regions and first source regions that are individually allocated to a group active region that is isolated from all sides by a trench isolation, and a second group of MOS transistors having second drain regions and second source regions allocated to the group active region. The second group is disposed between the first group and an edge of the group active region. One or both of the first drain regions and first source regions are not in contact with an edge of the trench isolation in a length direction of a finger-type gate electrode.
|
申请公布号 |
US2007020858(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20060485341 |
申请日期 |
2006.07.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG HYANG-JA;PARK SU-JIN;CHO UK-RAE;KIM SUNG-HOON |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|