| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a stable EUV by efficiently removing impurities (e.g., deposits of Sn and/or Sn compound, etc.) deposited to electrodes, etc. in an EUV light source. <P>SOLUTION: A raw material gas such as SnH<SB>4</SB>is introduced into a chamber 1, a high voltage pulse is applied between electrodes 3a, 3b from a high voltage pulse generator 12 to drive a high density high temperature plasma generator 9 to generate a high density high temperature plasma, thereby radiating an EUV light of 13.5 nm in wavelength. An EUV collecting mirror 5 reflects the radiated EUV light to radiate from an EUV light output unit 6. At the EUV radiation stop, etc. A rare gas such as Xe is introduced into the chamber 1, and a high voltage pulse is applied between the electrodes 3a, 3b from the high voltage pulse generator 12 to generate a rare gas plasma discharge. The rare gas high density high temperature plasma adiabatically expands to produce high speed ions or neutral atoms of the rare gas which collide against impurities deposited to the electrodes, etc. in the chamber to thereby break the impurities away. <P>COPYRIGHT: (C)2007,JPO&INPIT |
