| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve the conductive connections without passing through a bonding process of the semiconductor chips and solder balls in manufacturing of the semiconductor device called BGA for example. <P>SOLUTION: On a bonding layer 21 on a base plate 20 with a size corresponding to a plurality of semiconductor devices, a plurality of semiconductor configuration 22 are bonded which incorporate re-interconnection lines 30 on a silicon substrate (semiconductor chip) 21. Then, sealing films 31 are formed on the semiconductor configuration 22 and their surrounding bonding layers 22. Next, upper-layer re-interconnection lines 34 and insulating films 35, etc. are formed. Then, the base plate 20 is separated and removed from the semiconductor configuration 22, and a backside of the exposed semiconductor substrate is reduced in thickness. Subsequently, a plurality of semiconductor devices with solder ball 37 can be obtained by cutting each of the adjacent semiconductor configuration 22. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
