发明名称 METHOD OF VERTICAL INTERCONNECTION FOR SILICON SEGMENTS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and a device for stacking and interconnecting segments of silicon, and more particularly to provide a method and a device for stacking segments which include a plurality of dice and beveled edge walls and interconnecting the segments on the edges of the stack using electrically conductive epoxy. <P>SOLUTION: The segment 36 of silicon has at least three edges that define the segment. The segment 36 is a segment of a silicon that includes a plurality of dice each including a plurality of first connection pads; a plurality of edge connection pads 42 that are disposed in more than one position on the edges of the segment 36 to make an external electrical connection; and a layer of metal traces that are connected between the plurality of first connection pads to interconnect the dice, and further connect the plurality of edge connection pads 42 and the plurality of first connection pads to connect the dice to the external connection. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019527(A) 申请公布日期 2007.01.25
申请号 JP20060220350 申请日期 2006.08.11
申请人 VERTICAL CIRCUITS INC 发明人 PEDERSEN DAVID V;FINLEY MICHAEL G;SAUTTER KENNETH M
分类号 H01L25/00;H01L25/065;H01L21/60;H01L21/98;H01L23/373;H01L23/482;H01L23/485;H01L23/52;H01L23/525;H01L23/532;H01L23/538;H01L25/07;H01L25/18;H01L29/06;H01R4/04;H01R29/00;H05K3/30;H05K3/32;H05K7/02 主分类号 H01L25/00
代理机构 代理人
主权项
地址