CLEANSING LIQUID COMPOSITION FOR SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THE CLEANING LIQUID COMPOSITION, CLEANSING METHOD OF SEMICONDUCTOR SUBSTRATE USING THE CLEANING LIQUID COMPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE CLEANSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide means for removing polymer on a semiconductor substrate and/or a conductive structure without damaging the conductive structure and effectively suppressing particle pollution and metal pollution. SOLUTION: A cleansing liquid composition for a semiconductor substrate comprises: 80 to 99.8999 mass% of water solution containing: ammonium hydroxide compound and fluorine containing compound; 0.1 to 5 mass% of buffer; and 0.0001 to 15 mass% of corrosion inhibitor. Also, disclosed are the method of manufacturing the cleansing liquid composition, the cleansing method of the semiconductor substrate using the cleansing liquid composition, and the method of manufacturing a semiconductor device comprising the cleansing method. COPYRIGHT: (C)2007,JPO&INPIT