| 摘要 |
PROBLEM TO BE SOLVED: To prevent thyristor operation of a step-up circuit due to a parasitic transistor during actuation. SOLUTION: A charge pump type step-up circuit 201, incorporated in a semiconductor integrated circuit 200, has a vertical npn transistor T0 formed, as the initial charging element of a capacitor C2, in a p-type semiconductor substrate 21 and connected between the input terminal 1 and the output terminal 3. The vertical npn transistor T0 has an n well 22 formed in the p-type semiconductor substrate 21, a p well 23 formed in the n well 22, and an n-type region 24 formed in the p well 23. The n well 22 and the p well 23 of the transistor T0 are connected to the input terminal 1 and the n-type region 24 is connected to the output terminal 3. COPYRIGHT: (C)2007,JPO&INPIT
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