发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a distributed feedback semiconductor laser wherein an amount of return light into an element is reduced without using an optical isolator. SOLUTION: In the distributed feedback semiconductor laser (DFB-LD), a reflectance of a front end face 2 which emits laser beams is in a range of 10-30%. An end on the front end face 2 side of an InGaAsP active layer 1 is configured to cross the perpendicular line of the front end face 2 diagonally. By forming such a structure, a ratio that return light enters the DFB-LD is reduced to 1/10-1/30. Hence, the DFB-LD which reduces an affection of the return light is obtained without using the optical isolator. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019219(A) 申请公布日期 2007.01.25
申请号 JP20050198480 申请日期 2005.07.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI KAZUHISA
分类号 H01S5/12 主分类号 H01S5/12
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