发明名称 SUBSTRATE FOR CARBON NANOTUBE FORMATION, ITS MANUFACTURING METHOD, AND CARBON NANOTUBE
摘要 PROBLEM TO BE SOLVED: To allow certain selectivity in selecting the quality of a substrate and effectively generate a catalytic function by a catalyst metal formed on the substrate, and control the growth of carbon nanotube to have a crystal structure uniformly grown along a specific crystal orientation. SOLUTION: The substrate for carbon nanotube formation is composed of an Si substrate 1 as a single crystal substrate, an Ag film 2 as a diffusion barrier film, and a Co layer 3 as a catalyst metal layer, where carbon nanotube is grown and formed on the Co layer 3. The Ag film 2 has a crystal structure uniformly grown along a specific crystal orientation formed by an epitaxial growth reflecting the crystal structure of the Si substrate 1 and keeps a two phase separated-state with the Si substrate 1 and the Co layer 3 at a temperature where carbon nanotube grows. The Co layer 3 has a crystal structure uniformly grown along a specific crystal orientation formed by an epitaxial growth reflecting the crystal structure of the Ag film 2. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007015890(A) 申请公布日期 2007.01.25
申请号 JP20050199338 申请日期 2005.07.07
申请人 UNIV NAGOYA 发明人 SAKAI AKIRA;NAKATSUKA OSAMU;ZAIMA SHIZUAKI;TANEDA SATOSHI;OGAWA MASAKI
分类号 C01B31/02;B82B1/00 主分类号 C01B31/02
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