GATE DRIVER OUTPUT STAGE WITH BIAS CIRCUIT FOR HIGH AND WIDE OPERATING VOLTAGE RANGE

摘要

NEW ABSTRACT A simple, low cost, gate driver (20) and bias circuit (35) provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors ( M1-M3). A CMOS process with an epitaxial layer as bulk and p-type substrate is used to implement the circuit in this example.