| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor manufacturing apparatus capable of using ammonia discharged as emission gas without being used in a reactor again in the reactor. <P>SOLUTION: Transportation gas transports ammonia in an ammonia cylinder 11 and an organic metal in organic metal cylinders 12a, 12b, 12c to the reactor 16. In the reactor 16, the transported ammonia reacts with the organic metal to form a nitride semiconductor layer on a substrate. The emission gas, which did not contribute to the formation of the nitride semiconductor layer and contains ammonia, is refined by an ammonia refining section 20. The ammonia that has been taken out is transported to the reactor 16 again, and is used to form the nitride semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
