| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor component having a field stop, particularly a diode or IGBT, in which nonuniformity in a cathode emitter that is formed by implantation does not affect electrical characteristics with respect to the semiconductor component, particularly the diode; and to provide its manufacturing method. SOLUTION: A diode or the like is provided with: a first zone that is strongly doped and a second zone that is weakly doped wherein both of them are formed between an anode and a cathode; and a pn transition. In a semiconductor component, a field stop zone is extremely highly doped between the first zone and the second zone, and its doping concentration is higher than the concentration of an overflow charge in the conducting state of the pn transition. COPYRIGHT: (C)2007,JPO&INPIT
|
