| 发明名称 |
Semiconductor device with trench structure |
| 摘要 |
A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.
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| 申请公布号 |
US2007018275(A1) |
申请公布日期 |
2007.01.25 |
| 申请号 |
US20060528612 |
申请日期 |
2006.09.28 |
| 申请人 |
DENSO CORPORATION |
发明人 |
HIMI HIROAKI;NAKANO TAKASHI;MIZUNO SHOJI |
| 分类号 |
H01L29/00;H01L21/331;H01L21/76;H01L21/762;H01L21/82;H01L21/822;H01L21/8222;H01L21/8249;H01L21/84;H01L27/04;H01L27/06;H01L27/08;H01L27/12;H01L29/08;H01L29/73;H01L29/78;H01L29/786 |
主分类号 |
H01L29/00 |
| 代理机构 |
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代理人 |
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