| 摘要 |
<p>The invention concerns a reading amplifier (SA3) for reading a memory cell (MC (i, j,k) ), comprising: a reading node (Sin) connected to the memory cell, an active stage (RST3) connected to the reading node (Sin) and including means (TP3, TN3) for supplying a reading current (Ic) on the reading node, and a data output (Sout) connected to a node (N1) of the active stage where an electric voltage occurs representing the state of conductivity of the memory cell. The invention is characterized in that the reading amplifier includes means (TN5, R1) for adjusting a voltage (Vs) occurring on the reading node to a value lower than a threshold voltage value (Vtn) related to the manufacturing technology of the reading amplifier. The invention is applicable in particular to reading non-volatile EEPROM, FLASH and PCM memories.</p> |
