CMP COMPOSITION FOR POLISHING METAL

摘要

A CMP composition for polishing metal layers is provided to exhibit fast polishing speed, low etching rate, and good temporal stability without using a dispersion stabilizer and an oxidizer stabilizer. The CMP composition for polishing a metal layer contains 0.001-1.0wt%, based on the total composition, of an iron complex represented by the following formula 1. In the formula 1, A is aminoalcohol. The aminoalcohol is selected from 2-dimethylamino-2-methyl-1-propanol, 2-diethylamino-1-ethanol, or 2-amino-2-methyl-1-propanol. The CMP composition is used to polish a tungsten layer or a copper layer in production process of semiconductors.