发明名称 PHOTORESIST COMPOSITION, METHOD FOR FORMING PATTERN USING THE PHOTORESIST COMPOSITION, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DISPLAY PANEL USING THE COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To control the amount of a photoresist remaining in a channel region to be uniform and to reduce projections at an end of a semiconductor layer, in relation to a method for forming a pattern using a photoresist composition and to a method for manufacturing a thin film transistor display panel. <P>SOLUTION: The method for manufacturing a thin film transistor display panel includes steps of: forming a gate line on a substrate; depositing a gate insulating film and a semiconductor layer on the gate line; depositing a data layer on the semiconductor layer; forming a resist film containing a photosensitive compound comprising an alkali-soluble resin and a four-nuclide p-cresol on the data layer; patterning the resist film and subjecting the data layer to first etching using the resist pattern as an etching mask; etching the semiconductor layer using the data layer as an etching mask; reflowing the resist pattern; and subjecting the data layer to second etching using the resist pattern as an etching mask. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007017987(A) 申请公布日期 2007.01.25
申请号 JP20060189573 申请日期 2006.07.10
申请人 SAMSUNG ELECTRONICS CO LTD;DONGJIN SEMICHEM CO LTD 发明人 PARK JEONG-MIN;LEE HI-KUK;SHU SHINGO;JEON WOO-SEOK;JUNG DOO-HEE;KIM DONG-MIN;CHOI KI-SIK
分类号 G03F7/022;G03F7/004;G03F7/40;H01L21/027 主分类号 G03F7/022
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