发明名称 |
PHOTORESIST COMPOSITION, METHOD FOR FORMING PATTERN USING THE PHOTORESIST COMPOSITION, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DISPLAY PANEL USING THE COMPOSITION |
摘要 |
<P>PROBLEM TO BE SOLVED: To control the amount of a photoresist remaining in a channel region to be uniform and to reduce projections at an end of a semiconductor layer, in relation to a method for forming a pattern using a photoresist composition and to a method for manufacturing a thin film transistor display panel. <P>SOLUTION: The method for manufacturing a thin film transistor display panel includes steps of: forming a gate line on a substrate; depositing a gate insulating film and a semiconductor layer on the gate line; depositing a data layer on the semiconductor layer; forming a resist film containing a photosensitive compound comprising an alkali-soluble resin and a four-nuclide p-cresol on the data layer; patterning the resist film and subjecting the data layer to first etching using the resist pattern as an etching mask; etching the semiconductor layer using the data layer as an etching mask; reflowing the resist pattern; and subjecting the data layer to second etching using the resist pattern as an etching mask. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007017987(A) |
申请公布日期 |
2007.01.25 |
申请号 |
JP20060189573 |
申请日期 |
2006.07.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD;DONGJIN SEMICHEM CO LTD |
发明人 |
PARK JEONG-MIN;LEE HI-KUK;SHU SHINGO;JEON WOO-SEOK;JUNG DOO-HEE;KIM DONG-MIN;CHOI KI-SIK |
分类号 |
G03F7/022;G03F7/004;G03F7/40;H01L21/027 |
主分类号 |
G03F7/022 |
代理机构 |
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