| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance light take-out efficiency of a semiconductor light emitting element. <P>SOLUTION: The semiconductor light emitting element 10 comprises a buffer layer 14, an n-type GaN layer 16, an InGaN light emitting layer 18, and a p-type GaN layer 32 formed on a sapphire substrate 12. A ZnO layer 24 functioning as a transparent electrode is provided on the p-type GaN layer 32, and recesses are formed in the surface of the ZnO layer 24 at a two-dimensional interval. Assuming the wavelength of light from the InGaN light emitting layer 18 is λ in the air, the refractive index of the ZnO layer at that wavelength λ is n<SB>zλ</SB>, and the total reflection angle on the interface between the ZnO layer and a medium touching it is θ<SB>z</SB>, periodic interval L<SB>z</SB>of adjacent recesses is set in the following range; λ/n<SB>zλ</SB>≤L<SB>z</SB>≤λ/(n<SB>zλ</SB>×(1-sinθ<SB>z</SB>)). <P>COPYRIGHT: (C)2007,JPO&INPIT |
