| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target, when a thin film essentially consisting of Si and O as the main components is produced by a sputtering process, in which easiness to be cracked upon the film deposition is improved, and further, the generation of abnormal discharge can be suppressed. <P>SOLUTION: The sputtering target comprises Si and C as the main components. The sputtering target 1 has a structure where Si phases 3 are continuously present in the gaps of SiC crystal grains 2 so as to be a network shape. The average particle diameter of the Si phases 3 is ≤1,000 nm. By subjecting the sputtering target to sputtering in an oxygen-containing gas, an optical thin film comprising Si and O as the main components, and also comprising a third element other than the main components in the range of 10 to 2,000 ppm in the total content is deposited. <P>COPYRIGHT: (C)2007,JPO&INPIT |
