| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device having an excellent read characteristic irrespective of a capacitance value of a bit line. SOLUTION: The device includes a ferroelectric capacitance C1; a bit line BL; a first switching element 103 for selectively connecting the ferroelectric capacitance C1 to the bit line BL; a first transistor 203 connected to the bit line BL and reference potential; a reference ferroelectric capacitance CR1; a reference bit line Lref; a reference switching element 105 for selectively connecting the reference ferroelectric capacitance CR1 to the reference bit line Lref; a second transistor 201 connected to the reference bit line Lref and reference potential; potential control circuits 110 and 200 for controlling potential of the bit line BL and potential of the reference bit line Lref; and a timing control circuit 210 for controlling detection timing for detecting data on the bit line. COPYRIGHT: (C)2007,JPO&INPIT
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