| 摘要 |
A seamless trench fill method utilizing ozone-assisted sub-atmospheric pressure chemical vapor deposition (SACVD) technique is provided. After the deposition of a SACVD silicon oxide film, the substrate is subjected to a steam anneal that is performed under H<SUB>2</SUB>O<SUB>2 </SUB>environment at a relatively lower temperature ranging between 500° C. and 800° C. for a time period of no less than 30 minutes. The seam defect in the trench is effectively eliminated by this low-temperature steam anneal. To densify the SACVD silicon oxide film, a subsequent N<SUB>2 </SUB>anneal is carried out at a higher temperature, for example, 1050° C.
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