发明名称 Devices having vertically-disposed nanofabric articles and methods of making the same
摘要 Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
申请公布号 US2007018260(A1) 申请公布日期 2007.01.25
申请号 US20050158544 申请日期 2005.06.22
申请人 NANTERO, INC. 发明人 JAIPRAKASH VENKATACHALAM C.;WARD JONATHAN W.;RUECKES THOMAS;SEGAL BRENT M.
分类号 H01L29/82;B81B3/00;G11C11/56;G11C13/02;G11C23/00;H01H1/00;H01H59/00;H01L21/768;H01L23/48;H01L27/14;H01L31/115;H01L51/30 主分类号 H01L29/82
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