发明名称 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
摘要 The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
申请公布号 US2007018101(A1) 申请公布日期 2007.01.25
申请号 US20060528673 申请日期 2006.09.28
申请人 EBARA CORPORATION 发明人 NAKASUJI MAMORU;NOJI NOBUHARA;SATAKE TOHRU;HATAKEYAMA MASAHIRO;WATANABE KENJI;KATO TAKAO;SOBUKAWA HIROSI;KARIMATA TSUTOMU;YOSHIKAWA SHOJI;KIMBA TOSHIFUMI;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI
分类号 G21K7/00;G01N23/225;H01J37/06;H01J37/063;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28 主分类号 G21K7/00
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