发明名称 |
Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
摘要 |
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
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申请公布号 |
US2007018101(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20060528673 |
申请日期 |
2006.09.28 |
申请人 |
EBARA CORPORATION |
发明人 |
NAKASUJI MAMORU;NOJI NOBUHARA;SATAKE TOHRU;HATAKEYAMA MASAHIRO;WATANABE KENJI;KATO TAKAO;SOBUKAWA HIROSI;KARIMATA TSUTOMU;YOSHIKAWA SHOJI;KIMBA TOSHIFUMI;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI |
分类号 |
G21K7/00;G01N23/225;H01J37/06;H01J37/063;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28 |
主分类号 |
G21K7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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