发明名称 PHOTOMASK BLANK, PHOTOMASK AND FABRICATION METHOD THEREOF
摘要 A photomask blank, a photomask, and a manufacturing method thereof are provided to reduce damages to the photomask during an etching process by applying a photoresist film on the photomask blank. An optical blanking film(12) is formed on one output periphery of a transparent substrate(11), which is manufactured of a crystal. Photomask blank, the optical blanking film, serves as an anti-reflection film as well. A thickness of a chrome group compound is 70% the overall thickness of the optical blanking film. The overall thickness of the optical blanking film is less than 100nm. An OD(Optical Density) of the chrome group compound per unit thickness with respect to a beam having a wavelength of 450nm is 0.025nm^-1. When a photomask blank is used for manufacturing a mask for an ArF exposure process, the thickness and composition of the optical blanking film are varied, such that the OD of the optical blanking film lies between 1.2 and 2.3 with respect to the beam having a wavelength between 193nm and 248nm.
申请公布号 KR20070012250(A) 申请公布日期 2007.01.25
申请号 KR20060068275 申请日期 2006.07.21
申请人 SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. 发明人 YOSHIKAWA HIROKI;KUBOTA HIROSHI;KINASE YOSHINORI;OKAZAKI SATOSHI;MARUYAMA TAMOTSU;HARAGUCHI TAKASHI;IWAKATA MASAHIDE;FUKUSHIMA YUICHI;SAGA TADASHI
分类号 H01L21/027;G03F1/00 主分类号 H01L21/027
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