SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

In the surface of an n-type element active region of a semiconductor substrate (1) having a (100) plane, generally rectangular grooves (4) are formed. The side perpendicular to the direction in which the grooves (4) extend is (110) plane. A gate insulating film (5) and a gate electrode (6) are formed on the surface of the semiconductor substrate (1) by thermal oxidation. The direction in which the gate electrode (6) extends is perpendicular to the direction ([1-10]) in which the grooves (4) extend. That is, the gate width direction is the [110] direction. A side wall insulating film (7) and a p-type source/drain diffusion layer (8) are formed.