| 摘要 |
A polishing composition is provided to suitably polish the (0001)Si face, (000-1)C face, and both (0001)Si face and (000-1)C face of a silicon carbide single crystal substrate. The polishing composition contains abrasive particles and an oxo compound, and has a pH of 6 or higher. The oxo compound includes oxygen acid, periodic acid, or salts thereof. The polishing composition further comprises alkali including a lithium compound or ammonia. The polishing composition is used for polishing an object formed of single crystal silicon carbide.
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