VERTICALLY STRUCTURED GAN TYPE LED DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A gallium nitride-based LED device with a vertical structure is provided to minimize the contact resistance of an n-type gallium nitride layer by forming a two-dimensional electron gas layer having a heterojunction structure of AlGaN and undoped GaN between an n-type electrode and an n-type gallium nitride layer. An AlGaN layer is formed on the lower surface of an n-type electrode(180). An undoped GaN layer(220) is formed on the lower surface of the AlGaN layer, supplying two-dimensional electron gas layer to a junction interface of the AlGaN layer. A gallium nitride-based LED structure in which an n-type gallium nitride layer(120), an active layer(130) and a p-type gallium nitride layer(140) are sequentially formed is formed on the lower surface of the undoped GaN layer. A p-type electrode(150) is formed on the lower surface of the gallium nitride-based LED structure. A conductive substrate(170) is formed on the lower surface of the p-type electrode. A conductive junction layer(160) is further included on the p-type electrode or an interface between the p-type electrode and the conductive substrate.