发明名称 SEMICONDUCTOR DEVICE AND RADIO ELECTRONIC DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a multilayer wiring board with a capacitor having a high dielectric constant material thin in thickness while exhibiting a small capacitance variation and that has no problem in formability, to provide a method of fabricating the multilayer wiring board, and to provide a semiconductor device and a radio electronic device. <P>SOLUTION: The multilayer wiring board has a plurality of insulating layers, a plurality of conductive layers, a non-through hole processed to be conductive to connect the plurality of conductive layers electrically, and a capacitor 12 having electrodes formed on upper and lower surfaces of at least one insulating layer formed of a high dielectric constant material 8. Recesses between conductor patterns including the electrodes are filled with insulating materials different from the high dielectric constant material 8, and the surfaces of the conductor patterns and the surfaces of the filled insulating materials are flattened. A method of fabricating the multilayer wiring board, a semiconductor device having a semiconductor chip mounted on the multilayer wiring board, and a radio electronic device mounted with the semiconductor device, are also disclosed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007019530(A) 申请公布日期 2007.01.25
申请号 JP20060230550 申请日期 2006.08.28
申请人 HITACHI CHEM CO LTD 发明人 SHIMADA YASUSHI;HIRATA YOSHITAKE;KURITANI HIROYUKI;OTSUKA KAZUHISA;YAMAGUCHI MASANORI;SHIMAYAMA YUICHI;MADARAME TAKESHI;WATANABE ETSUO;KONDO YUSUKE;YAMAMOTO KAZUNORI
分类号 H01L23/12;H05K3/46 主分类号 H01L23/12
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