| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress a current from flowing through a pn junction location when a forward voltage is applied thereto, can keep a breakdown voltage upon the application of the forward voltage, and also can suppress an inverse saturation current; and also to provide a method for manufacturing the semiconductor device. SOLUTION: In the semiconductor device, an SiGe layer 25 is buried in a region sandwiched by a source/drain 20 within an Si substrate 10. A gate insulating film 27 and a gate electrode 28 are formed on the SiGe layer 25. The SiGe layer 25 may be replaced with a layer made of a material having a band gap smaller than that of Si. For example, the material layer may be made of an SiC layer, an SiGeC layer or the like. COPYRIGHT: (C)2007,JPO&INPIT
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