SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a uniform silicide layer without the abnormal growth of a nickel silicide in a semiconductor device formed with a nickel silicide layer. SOLUTION: A semiconductor device manufacturing method is provided with a process for forming a gate electrode on a silicone substrate, a process for forming side walls on both sides of the gate electrode, and a process for forming a silicide region on the silicon substrate. A reaction inhibition layer of silicification is formed in a surface region of the silicone substrate below the side walls before the formation process of the silicide region. COPYRIGHT: (C)2007,JPO&INPIT