| 摘要 |
A method for forming a thin-film transistor includes forming a source electrode and a drain electrode on an element-side substrate, forming a semiconductor layer in contact with the source electrode and the drain electrode, forming a gate insulating layer overlaid on the semiconductor layer, and forming a gate electrode overlaid on the gate insulating layer, wherein the semiconductor layer is formed over a laser process at the step of forming the semiconductor layer in contact with the source electrode and the drain electrode.
|
