| 摘要 |
A polishing composition for chemical mechanical polishing which comprises a carboxylic acid, an oxidizing agent, and water and has pH adjusted to 5 to 9 with an alkali. In chemical mechanical polishing for obtaining a high precision surface, particularly in chemical mechanical polishing for forming a circuit layer in production of semiconductor devices, the polishing composition shows a high polishing rate, has a high selectivity for circuit materials from insulation films, forms few corrosion marks or dishing, has neutral pH, does not contain any metal components which adversely affect properties of semiconductor devices, does not require any special expensive chemical agents, and does not comprise any substances harmful for human health as the main component. |
