METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to improve yield of a semiconductor device by omitting an interconnection formation process for avoiding oxidation. A first oxide layer(135), a nitride layer(140), a first polysilicon layer(145) and a hard mask layer are stacked on a substrate(100). The hard mask layer and the first polysilicon layer in a capacitor region are etched. An USG(undoped-silicate-glass) layer is formed, thicker in a peripheral circuit region than in a cell region. The USG layer in the cell region is removed. The hard mask layer in the cell region, the nitride layer in the capacitor region and the USG layer in the peripheral circuit region are eliminated, and the first oxide layer in the capacitor region is etched. The stack structure of the first polysilicon layer and the nitride layer in the cell region are removed. The hard mask layer in the peripheral circuit region is removed. A lower electrode layer, a dielectric layer and a plate electrode layer are sequentially formed on the substrate, and a second oxide layer is formed. The second oxide layer, the plate electrode layer and the dielectric layer are planarized to expose the first polysilicon layer in the peripheral circuit region. The second oxide layer is removed, and a second polysilicon layer(180) is formed. The second polysilicon layer, the first polysilicon layer and the nitride layer on an interface between the cell region and the peripheral circuit region are etched to form a fuse in the peripheral circuit region.