发明名称 |
LIGHT EMITTING DIODE OF VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability by forming a metal support layer on the top of a light emitting structure by an electrolytic plating method for which a high-temperature process is not required to reduce the occurrence of a defect in an element, and by forming a metal support layer including a soft metal and a hard metal on the top of the light emitting structure to prevent a warp of a wafer and to increase the mechanical strength. <P>SOLUTION: The light emitting diode of vertical structure includes a light emitting structure 20 and a metal support layer constituted by a soft metal and a hard metal having the Young's modulus higher than that of the soft metal. In addition, the metal support layer is constituted by an alloy of soft metal and hard metal. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007019502(A) |
申请公布日期 |
2007.01.25 |
申请号 |
JP20060182772 |
申请日期 |
2006.06.30 |
申请人 |
LG ELECTRONICS INC;LG INNOTEK CO LTD |
发明人 |
KIM SONJON;LEE HYUNG JAI;KIM GEUNHO |
分类号 |
H01L33/12;H01L21/28;H01L33/32;H01L33/40 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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