发明名称 LIGHT EMITTING DIODE OF VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To improve reliability by forming a metal support layer on the top of a light emitting structure by an electrolytic plating method for which a high-temperature process is not required to reduce the occurrence of a defect in an element, and by forming a metal support layer including a soft metal and a hard metal on the top of the light emitting structure to prevent a warp of a wafer and to increase the mechanical strength. <P>SOLUTION: The light emitting diode of vertical structure includes a light emitting structure 20 and a metal support layer constituted by a soft metal and a hard metal having the Young's modulus higher than that of the soft metal. In addition, the metal support layer is constituted by an alloy of soft metal and hard metal. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019502(A) 申请公布日期 2007.01.25
申请号 JP20060182772 申请日期 2006.06.30
申请人 LG ELECTRONICS INC;LG INNOTEK CO LTD 发明人 KIM SONJON;LEE HYUNG JAI;KIM GEUNHO
分类号 H01L33/12;H01L21/28;H01L33/32;H01L33/40 主分类号 H01L33/12
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