| 摘要 |
A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k1/h1+ arctan k2/h2. The film is grown on the substrate using a layer-by-layer growth mode.
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