发明名称 Semiconductor device
摘要 Strip metallic thin films each having a width of 180 mum or so are disposed in parallel at intervals of 10 mum to 50 mum on the surface of a protection layer formed on the silicon substrate and at their corresponding spots located on the upper side of an analog circuit formed in a silicon substrate. These strip metallic thin films are connected to one another at their ends or centers to form a comb-like shield section and one end thereof is connected to its corresponding external connecting post. Incidentally, the shield section is formed by copper plating in the same process as redistribution wirings that connect electrode pads at an outer peripheral portion of the silicon substrate to their corresponding external connecting posts. Since the encapsulating resin and the protection layer are reliably adhered to each other when the upper portions of the redistribution wirings and the shield section are sealed with the encapsulating resin, the shield section is adhered to the encapsulating resin and has no fear of being peeled therefrom.
申请公布号 US2007020999(A1) 申请公布日期 2007.01.25
申请号 US20060488190 申请日期 2006.07.18
申请人 SHIRAISHI YASUSHI 发明人 SHIRAISHI YASUSHI
分类号 H01R13/648 主分类号 H01R13/648
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