| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory having adjustable resistance ratio. <P>SOLUTION: The phase change memory includes a phase change layer and a boundary layer formed so as to contact mutually, and at least two electrodes contacting the phase change layer and the boundary layer, respectively. One electrode of the two electrodes and the contact of the phase change layer and another electrode and the contact of the boundary layer are demarcated in their contact areas, respectively. The area demarcated by the contact between the electrode and the phase change layer is larger than the area demarcated by the contact between the electrode and the boundary layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
