| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize an inspection of a mask pattern with a high sensibility. <P>SOLUTION: In an inspection method of the mask pattern, comprising irradiating a sample including a substrate surface pattern formed by the transfer of the mask pattern with an electron beam, then obtaining an image of the surface of the sample by detecting secondary electrons, reflection electrons and backscattered electrons generated from the surface of the sample, and inspecting the mask pattern based on the obtained image, the sample is formed by forming the substrate surface pattern on an electroconductive or semiconductive substrate so that the substrate surface pattern is made into a state electrically connected to the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
