发明名称 HIGH FREQUENCY POWER AMPLIFIER AND OPERATION VOLTAGE CONTROL CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an output power control technique capable of reducing leakage of a signal to a reception band in a high frequency power amplification circuit which fixes a bias voltage applied to a control terminal of an amplification element and varies an operation voltage (source voltage) in accordance with a signal indicating an output level, to control an output power. SOLUTION: In high frequency power amplifiers (210 and 220) including an operation voltage control circuit (220) which varies an operation voltage (Vldo) supplied to amplification elements (211 to 213) in accordance with a signal (Vramp) indicating the output level, to control the output power, a bipolar transistor is used as a transistor (Q0) for power control which outputs the operation voltage to be supplied to amplification elements. Furthermore, a clamp circuit (222) is provided which clamps an output voltage of the transistor for power control so that the transistor doesn't enter the saturation region even in the case that the signal indicating the output level is set to a maximum level within its variable range. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019784(A) 申请公布日期 2007.01.25
申请号 JP20050198409 申请日期 2005.07.07
申请人 RENESAS TECHNOLOGY CORP 发明人 FURUYA TOMIO;TOMONO HIDEJI;ISHIMOTO KAZUHIKO;TANAKA HIROYUKI
分类号 H03G1/04;H03F1/26;H03F3/189;H03F3/20;H03G3/00 主分类号 H03G1/04
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