MICROELECTRONIC DEVICE PROVIDED WITH TRANSISTORS COATED WITH A PIEZOELECTRIC LAYER
摘要
The invention relates to an improved microelectronic device which is provided with one or several transistors (TI) and piezoelectric means (220), has an improved structural design and which makes it possible to expose the transistor channels to a modulable mechanical stress. A method for producing the inventive microelectronic device is also disclosed.
申请公布号
WO2007010029(A1)
申请公布日期
2007.01.25
申请号
WO2006EP64491
申请日期
2006.07.21
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;LOLIVIER, JEROME;VINET, MAUD;POIROUX, THIERRY