发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
A thin film transistor substrate and a method for fabricating the same are provided to automatically separate short-circuited signal fan-outs without a repair process using a laser, by removing a conductive residual matter exposed by fan-out contact holes. Gate fan-outs are formed at a non-display area on a substrate(101). An insulator film(126) is formed to cover the gate fan-outs. Fan-out contact holes are formed, passing through the insulator film between the gate fan-outs. Data fan-outs are formed on the insulator film of the non-display area. A conductive residual matter exposed by the fan-out contact holes is removed. |
申请公布号 |
KR20070011661(A) |
申请公布日期 |
2007.01.25 |
申请号 |
KR20050066097 |
申请日期 |
2005.07.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOU, CHUN GI;PARK, GYUNG SOON |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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