发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 A thin film transistor substrate and a method for fabricating the same are provided to automatically separate short-circuited signal fan-outs without a repair process using a laser, by removing a conductive residual matter exposed by fan-out contact holes. Gate fan-outs are formed at a non-display area on a substrate(101). An insulator film(126) is formed to cover the gate fan-outs. Fan-out contact holes are formed, passing through the insulator film between the gate fan-outs. Data fan-outs are formed on the insulator film of the non-display area. A conductive residual matter exposed by the fan-out contact holes is removed.
申请公布号 KR20070011661(A) 申请公布日期 2007.01.25
申请号 KR20050066097 申请日期 2005.07.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOU, CHUN GI;PARK, GYUNG SOON
分类号 G02F1/136 主分类号 G02F1/136
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