发明名称 |
SEMICONDUCTOR ON INSULATOR SUBSTRATE AND DEVICE FORMED THEREFROM |
摘要 |
<p>A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material (52) having a perovskite lattice, such as a rare earth scandate. The dielectric material (52) is selected to have an effective lattice constant that enables growth of semiconductor material (54) having a diamond lattice directly on the dielectric (52). Examples of the rare earth scandate dielectric include gadolinium scandate (GdScO3), dysprosium scandate (DyScO3), and alloys of gadolinium and dysprosium scandate (Gd1-XDyXSc03). ® KIPO & WIPO 2007</p> |
申请公布号 |
KR20070012458(A) |
申请公布日期 |
2007.01.25 |
申请号 |
KR20067023279 |
申请日期 |
2005.03.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI |
分类号 |
H01L29/786;H01L21/20;H01L21/31 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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