| 摘要 |
A plasma processing device having a plasma generation unit and a chamber housing a substrate to be processed thereinside, wherein a process gas introducing mechanism, which is provided between the plasma generation unit and the chamber to introduce a process gas into a process space defined by the plasma generation unit and the chamber, is formed with a gas introducing path that supports a plasma generation unit, is mounted on the chamber and introduces a process gas into a process space, and which has a gas introducing base having at the center thereof a hole forming part of the process space and an almost annular gas introducing plate removably attached to the hole of the gas introducing base and having a plurality of gas emitting holes communicating with the process space from the gas introducing path to emit a process gas into the process space. ® KIPO & WIPO 2007
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